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An Erda Study on Proton Migration Induced by Electric Potential in SrZrO3,SrCeO3 and BaCeO3 Oxides:Measurements of Proton Transport Number and Proton Diffusivity

Published online by Cambridge University Press:  10 February 2011

A. Kunimatsu ,
T. Arai ,
K. Takahiro ,
S. Nagata ,
S. Yamaguchi ,
Y. Akiyama ,
N. Sata  and
M. Ishigame
A. Kunimatsu
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980,Japan
T. Arai
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980,Japan
K. Takahiro
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980,Japan
S. Nagata
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980,Japan
S. Yamaguchi
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980,Japan
Y. Akiyama
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, Sendai 980,Japan
N. Sata
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, Sendai 980,Japan
M. Ishigame
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, Sendai 980,Japan
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Abstract

Migration of protons dissolved in acceptor doped SrZrO3, SrCeO3 and BaCeO3 oxides has been examined under an applied electric potential over a range of temperature from 25 to 220°C. Protons which dissolved in these oxides migrated to the cathode, and they were trapped there when the cathode material had a good ability to getter the migrating hydrogen. The amount of hydrogen accumulated in the cathode could be measured by the ERDA method using a highenergy 4He beam. We measured the amount of hydrogen in the cathode while monitoring the dc current passed through the oxide specimen. The proton transport number was determined from the ratio of the number of hydrogen in the cathode to the total numbers of charge through the specimen. The diffusion coefficient of proton was evaluated using the proton transport number and proton concentration in the specimen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 209
Copyright
Copyright © Materials Research Society 1998

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References

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