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An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV

Published online by Cambridge University Press:  15 February 2011

S. J. Morris ,
B. Obradovic ,
S. -H. Yang ,
A. F. Tasch  and
L. Rubin
S. J. Morris
Affiliation:
Mail Code R9950, The University of Texas at Austin, PRC-MER Bldg., Rm 2.608C, Austin, TX 78712
B. Obradovic
Affiliation:
Mail Code R9950, The University of Texas at Austin, PRC-MER Bldg., Rm 2.608C, Austin, TX 78712
S. -H. Yang
Affiliation:
Now with Texas Instruments, Dallas, TX.
A. F. Tasch
Affiliation:
Mail Code R9950, The University of Texas at Austin, PRC-MER Bldg., Rm 2.608C, Austin, TX 78712
L. Rubin
Affiliation:
Eaton Corporation, Semiconductor Equipment Division, 108 Cherry Hill Drive, Beverly, MA 01915
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Abstract

An electronic stopping power model for boron, arsenic, and phosphorus ion implantation into single-crystal Si is reported over the energy range fr'om a few keV to several MeV, for both offand on-axis implant angles relative to the <100> crystallographic direction. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions. In particular, this allows modeling of MeV implants which are being used more and more frequently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 107
Copyright
Copyright © Materials Research Society 1997

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