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An Electron Paramagnetic Resonance Investigation of Iron-Indium Pairs in Silicon

Published online by Cambridge University Press:  25 February 2011

P. Emanuelsson ,
W. Gehlhoff ,
P. Omling  and
H. G. Grimmeiss
P. Emanuelsson
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
W. Gehlhoff
Affiliation:
Academy of Sciences of the GDR, Centre for Scientific Instruments, Rudower Chaussee 6, Berlin 1199, GDR
P. Omling
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
H. G. Grimmeiss
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
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Abstract

Three different Electron Paramagnetic Resonance (EPR) signals, one trigonal and two orthorhombic, which originates from iron-indium pairs in silicon are investigated. It is shown that the two orthorhombic spectra can be explained as transitions within the two doublets of a S=3/2 system with a large zero-field splitting. The temperature dependence of-the intensities reveals that the newly discovered spectrum corresponds to the lower doublet and that the zero-field splitting is 9.8 ± 2.0 cm-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 307
Copyright
Copyright © Materials Research Society 1990

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References

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