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An Electrochemical Study of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

J. D. L'ecuyer  and
J. P. G. Farr
J. D. L'ecuyer
Affiliation:
Centre de Technologie Noranda, 240 boul. Hymus, Pointe-Claire, Canada. H9R 1G5
J. P. G. Farr
Affiliation:
School of Metallurgy and Materials, The University of Birmingham, Birmingham B15 2TT.
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Abstract

The I-V and impedance characteristics of p and n-type silicon electrodes in HF solutions have been determined. Three different I-V regimes are observed, one of which is associated with the on-set of localized dissolution. The formation of porous silicon takes place via a surface state mediated charge transfer mechanism. The position of the main recombination-generation center is estimated at 400 mV above the valence band edge. Localized dissolution is initiated at or close to active adsorption sites. It is then favoured because of geometrical field enhancement effects. Porous silicon has a surface chemistry that can be significant in luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 3
Copyright
Copyright © Materials Research Society 1993

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References

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