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An Auger Electron Spectroscopy (AES) Investigation into the Effect Annealing on the Phase Distribution of Ion Implanted Oxygen in Silicon

Published online by Cambridge University Press:  22 February 2011

C G Tuppen ,
G J Davies ,
M R Taylor  and
R Heckingbottom
C G Tuppen
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
G J Davies
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
M R Taylor
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
R Heckingbottom
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
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Abstract

Buried oxide layers, formed by high dose ion implantation, have been examined using Auger depth profiling. The phase distribution of oxygen in the wings of the implant profile and effects of high temperature annealing, have been investigated. Ion beam induced cascade mixing, which occurs during sputter etching, limits the minimum detectable size of SiO2 precipitates. However, it is possible to minimise this effect by reducing the ion beam energy. At very small precipitate sizes (<100Å) silicon atoms at the edge of the precipitate particles will make a major contribution to the Si KLL Auger spectrum. A previously reported theoretical model has been expanded to take account of this phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 537
Copyright
Copyright © Materials Research Society 1984

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References

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