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An Antimony Planar Diffusion Source

Published online by Cambridge University Press:  25 February 2011

Jack Wilson ,
Robert Gustaferro ,
Alan Bonny  and
Ed Maddox
Jack Wilson
Affiliation:
BP America, Research Center Warrensville. 4440 Warrensville Center Road, Cleveland, OH 44128
Robert Gustaferro
Affiliation:
BP America, Research Center Warrensville. 4440 Warrensville Center Road, Cleveland, OH 44128
Alan Bonny
Affiliation:
Now with Marathon Venture Partners, San Francisco, CA 94105
Ed Maddox
Affiliation:
BP America, Research Center Warrensville. 4440 Warrensville Center Road, Cleveland, OH 44128
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Abstract

Antimony is a useful n-type dopant for buried layers, due to its low rate of lateral diffusion in subsequent processing steps. To date, no solid planar diffusion source has been available. Reported here is the development of such a source.

The source is made by high temperature synthesis in a hot press. A mixture of antimony trioxide and silicon powders is placed in the press, and heated under pressure. The reaction

results in a solidified product. Wafers are sliced from this product to form the actual planar diffusion sources.

The sources are used in a two-step doping process: a predeposition followed by a drive-in. Oxygen is required in both steps, due to the chemistry involved. Typical properties of the doped silicon are: sheet resistance, 10 Ω/square, junction depth, 4–6 microns, and antimony surface concentration. 3–8 × 1019/cm3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 629
Copyright
Copyright © Materials Research Society 1989

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References

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