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An Alternative Approach for Modeling the Hot Carrier Degradation of the Si/SiO2 Interface

Published online by Cambridge University Press:  10 February 2011

Zhi Chen ,
Jinju Lee  and
Joseph W. Lyding
Zhi Chen
Affiliation:
Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, IL 61801
Jinju Lee
Affiliation:
Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, IL 61801
Joseph W. Lyding
Affiliation:
Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, IL 61801
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Abstract

An alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface based on the dispersive characteristics of the interface trap generation has been proposed. The timedependent interface trap generation has been modeled using the stretched exponential expression. The conventional power law of degradation is just the approximation of this general form. Very good agreement has been found between the theoretical model and the experimental data. This approach gives more physical insight into the understanding of the mechanism for the interface trap generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 313
Copyright
Copyright © Materials Research Society 1998

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References

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