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An Alternative Approach for Modeling the Hot Carrier Degradation of the Si/SiO2 Interface
Published online by Cambridge University Press: 10 February 2011
Abstract
An alternative approach for modeling the hot carrier degradation of the Si/SiO2 interface based on the dispersive characteristics of the interface trap generation has been proposed. The timedependent interface trap generation has been modeled using the stretched exponential expression. The conventional power law of degradation is just the approximation of this general form. Very good agreement has been found between the theoretical model and the experimental data. This approach gives more physical insight into the understanding of the mechanism for the interface trap generation.
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- Copyright © Materials Research Society 1998