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Amplitude Dependence of Metastable Defect Formation

Published online by Cambridge University Press:  01 January 1993

W.B. Jackson ,
C. Nebel  and
R.A. Street
W.B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. Nebel
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The kinetics of small changes from thermal equilibrium are measured and simulated for thermally induced metastable changes. We find that only a distribution of rate constants is consistent with the data, and therefore we can eliminate certain types of microscopic models for metastability which depend on a single variable such as the carrier density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 249
Copyright
Copyright © Materials Research Society 1993

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References

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