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Amplification of Misorientation of Ge Films on Si (100) During Ion-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

Cho-Jen Tsai  and
Harry A. Atwater
Cho-Jen Tsai
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We have observed significant increases in the misorientation of Ge films on Si (001) grown by ion-assisted molecular beam epitaxy. The misorientation between the Ge films and Si substrates was found to be a function of the ion-to-atom flux ratio and growth temperature. The parametric dependence of the misorientation on the growth conditions suggests that defects generated by low energy ion bombardment are responsible for the observed increase in misorientation. The amplification of misorientation produced by concurrent low energy ion bombardment during epitaxial growth was attributed to an increase in the fraction of misfit strain accommodated by threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 431
Copyright
Copyright © Materials Research Society 1993

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References

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