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Amphoteric Behaviour of Ge in InP: A RBS/Channeling and Differential Hall/Resistivity Study
Published online by Cambridge University Press: 26 February 2011
Abstract
The lattice location of ion implanted Ga, Ge, and Se in InP has been determined with a combined RBS/channeling-PIXE technique and correlated to the carrier concentration and mobility profiles obtained with differential Hall/resistivity measurements.
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- Copyright © Materials Research Society 1992