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Amorphous-to-Microcrystalline Silicon Transition in Hot-Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

P. Brogueira ,
V. Chu  and
J. P. Conde
P. Brogueira
Affiliation:
Instituto Superior Técnico, Department of Physics, 1096 Lisboa Codex, Portugal
V. Chu
Affiliation:
INESC, Rua Alves Redol 9, 1000 Lisboa, Portugal
J. P. Conde
Affiliation:
Instituto Superior Técnico, Department of Physics, 1096 Lisboa Codex, Portugal
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Abstract

The conductivity and the structural properties of thin films deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) from silane and hydrogen at a substrate temperature of 220 °C are shown to be strongly dependent on the filament temperature, Tfil, and process pressure, p. Amorphous silicon films are obtained at low pressures, p < 3 × 10−2Torr, for Tfil ∼ 1900 °C and FH2 = FSiH4. At this TfilJU, high deposition rates are observed, both with and without hydrogen dilution, and no silicon was deposited on the filaments. At Tfil ∼ 1500 °C, a transition from a-Si:H for p > 0.3 Torr to microcrystalline silicon (μc-Si:H) for p < 0.1 Torr occurs. In this temperature regime, silicon growth on the filaments is observed. /ic-Si:H growth both without hydrogen dilution and also in very thin films (∼ 0.05 μm) is achieved. Raman and X-Ray spectra give typical grain sizes of 10 – 20 nm, with a crystalline fraction higher than 50%. For both, Tju ∼ 1500 °C, p > 0.3 Torr and Tfil ∼ 1900 °C and p ∼ 2.7 × 10−2Torr, an increase of the crystalline fraction from 0 to ∼ 30% is observed when the hydrogen dilution, FH2/FSiH4, increases from 1 to > 4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 57
Copyright
Copyright © Materials Research Society 1995

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References

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