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Amorphous-to-Crystalline Transformation and Metal Induced Crystallization Phenomena in a-Si:F and a-Si:D:H Thin Films

Published online by Cambridge University Press:  26 February 2011

F. Edelman ,
C. Cytermann ,
R. Brener ,
M. Eizenberg ,
R. Weil  and
W. Beyer
F. Edelman
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
C. Cytermann
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
R. Brener
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
M. Eizenberg
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
R. Weil
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
W. Beyer
Affiliation:
Institut fur Schicht- und Ionentechnik, KFA Juelich., Germany
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Abstract

The structural stability of silicon in the amorphous state has been studied by TE1 on in-situ heat treated non-supported layers of a-Si:F, a-Si:D:H and double-layers of a-Si:F/Pd and a-Si:D:H/Pd structures. The a-Si:F and a-Si:D:H films, 500-800A thick, were evaporated by plasma decomposition of a(SiH4+D2)-mixture and SiF2, at 200-260°C onto cleaved rock salt. Pd film was deposited on a-Si by electron beam evaporation at room temperature. The amorphous-to-crystalline transition for the a-Si was quantitatively described by the delay time, t0, before the onset of crystallization. This parameter was found to decrease exponentially with the temperature. Influence of the Pd on t0 (metal induced crystallization) is discussed. This is the first report on the influence of F on the metal/a-Si system. It is also the first time a direct method is used to determine the temperature dependence of the fundamental parameter-delay time preceding a-Si crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 75
Copyright
Copyright © Materials Research Society 1992

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