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Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature

Published online by Cambridge University Press:  29 January 2014

P. Schlupp ,
H. von Wenckstern  and
M. Grundmann
P. Schlupp
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
H. von Wenckstern
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
M. Grundmann
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
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Abstract

For a cost-efficient fabrication of homogeneous oxide thin films the usage of amorphous materials is favorable. They can be deposited at room temperature (RT) and represent an interesting alternative to amorphous silicon in electronics. Zinc-tin oxide is a promising n-type channel material for thin film transistors and consists of abundant elements, only, in contrast to the well-explored indium gallium zinc oxide. Here, the electrical and optical properties of room temperature deposited ZTO thin films are discussed. These films were fabricated via pulsed-laser deposition on glass substrates by ablating a ceramic target composed of ZnO and SnO2 in a 1:2 ratio. The resistivity has been controlled over seven orders of magnitude via the oxygen growth pressure. Further, the optical transmittance tends to be higher for higher oxygen growth pressures.

Keywords

amorphousZnSn
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 101 - 104
Copyright
Copyright © Materials Research Society 2014 

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References

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