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Published online by Cambridge University Press: 25 February 2011
Ion mixing of FeNi-Si multilayers is performed at the same dose of 3.1015 Xe+ cm−2 with either of the three energies 200, 300 or 400 keV. The irradiation is done at liquid nitrogen temperature (LNT) or at room temperature (RT). The mixed layers are characterized by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), Rutherford backscattering (RBS), secondary ion mass spectroscopy (SIMS) and ferromagnetic resonance (FMR). Films made at 400 keV are more reproducible and as homogeneous as the best amorphous films realized up to now, using sputtering techniques.