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Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators

Published online by Cambridge University Press:  10 February 2011

N. A. Feoktistov ,
N. L. Ivanova ,
L. E. Morozova ,
Yu. A. Nikulin ,
A. P. Onokhov ,
A. B. Pevtsov  and
R. Schwarz
N. A. Feoktistov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia, [email protected]
N. L. Ivanova
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia, [email protected]
L. E. Morozova
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia, [email protected]
Yu. A. Nikulin
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia, [email protected]
A. P. Onokhov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia, [email protected]
A. B. Pevtsov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia, [email protected]
R. Schwarz
Affiliation:
Technical University of Munich, Physics Department E16, D-85747 Garching, FRG
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Abstract

Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-Si1-xCx,:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-Si1-xCx:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40μLW/cm2, with a resolution (FWHM) of the diffraction efficiency of 54 mm-1. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 189
Copyright
Copyright © Materials Research Society 1996

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