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Amorphous Silicon Crystallization For TftApplications

Published online by Cambridge University Press:  15 February 2011

J. Yi ,
R. Wallace ,
N. Sridhar ,
D. D. L. Chung  and
W. A. Anderson
J. Yi
Affiliation:
Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic materials, State University of New York at Buffalo, 215 Bonner Hall, Buffalo, N.Y. 14260
R. Wallace
Affiliation:
Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic materials, State University of New York at Buffalo, 215 Bonner Hall, Buffalo, N.Y. 14260
N. Sridhar
Affiliation:
Department of mechanical and Aerospace Engineering
D. D. L. Chung
Affiliation:
Department of mechanical and Aerospace Engineering
W. A. Anderson
Affiliation:
Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic materials, State University of New York at Buffalo, 215 Bonner Hall, Buffalo, N.Y. 14260
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Abstract

Thin film hydrogenated Amorphous silicon (a-Si:H) was deposited onMolybdenum (Mo) substrates by d.c. glow discharge. We investigated thea-Si:H crystallization using four anneal techniques; nitrogen atmospherefurnace, vacuum, rapid thermal anneal (RTA), and excimer laser anneal.Anneal temperature ranged from 100 to 1200 °C. Excimer laser energy perpulse ranged from 90 to 340 M.J. Transmission electron Microscopy (TEM)revealed microstructure of crystallized Si film with grain size over 0.5 μm.X-ray diffraction (XRD) and Raman spectroscopy were employed to determinethe degree of crystallization. The a-Si:H started to crystallize attemperatures over 600 °C. An 850 °C anneal reduced film resistivity to 10s (ω-cm) for intrinsic and 1 (ω-cm) for n-type. Coplanartype thin film transistors (TFT) with gate channel length of 25 μm and widthof 220 μm were fabricated with various insulating layers; if sputtered SiO2, Si3N4, BaTiO3, MgO, andevaporated SiO. The first two exhibited the least leakage current. Theas-grown intrinsic a-Si:H field effect mobility was around 0.03 (cmVV.s) anddelay time was 5×10−7 s. The solid phase crystallized siliconfilm exhibited high leakage current. The delay time of an excimer laseranneal treated TFT was reduced to 2.5×10−7 s. Crystallized Sifilm mobility was improved to 15 (cm2 /V.s).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 701
Copyright
Copyright © Materials Research Society 1994

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References

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