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Amorphous silicon Bragg reflectors fabricated by oblique angle deposition

Published online by Cambridge University Press:  25 April 2012

S. J. Jang ,
C. I. Yeo  and
Y. T. Lee
S. J. Jang*
Affiliation:
School of Information & Mechatronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 Korea
C. I. Yeo
Affiliation:
School of Information & Mechatronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 Korea
Y. T. Lee
Affiliation:
School of Information & Mechatronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 Korea Graduate Program of Photonic and Applied Physics, Gwangju Institute of Science & Technology, Gwangju, 500-712 Korea Department of Nanobio Materials & Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 Korea
*
*Email: [email protected]
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Abstract

We demonstrate the highly reflective broadband a-Si distributed Bragg reflector fabricated by oblique angle deposition. By tuning the refractive index of a-Si film, the high index contrast material system was achieved. The broadband reflective characteristics of a-Si distributed Bragg reflector were investigated by calculation and fabrication. The broad stop band (Δλ/λ=33.7%, R>99%) with only a five-pair a-Si distributed Bragg reflector was achieved experimentally at center wavelength of 650, 980, and 1550 nm. The size-, feature- and substrate-independent method for highly reflective Bragg reflectors was realized by simple oblique angle evaporation.

Keywords

optical propertiesthin filmSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-34
Copyright
Copyright © Materials Research Society 2012

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References

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