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Amorphous Silicon and Silicon-Germanium Thin-Film Transistors Formed by Ion Implantation

Published online by Cambridge University Press:  01 January 1993

G. Sarcona ,
M.K. Hatalis  and
A. Catalano
G. Sarcona
Affiliation:
Sherman-Fairchild Laboratory, Electrical Engineering Dept, Lehigh University, Bethlehem, PA 18015
M.K. Hatalis
Affiliation:
Sherman-Fairchild Laboratory, Electrical Engineering Dept, Lehigh University, Bethlehem, PA 18015
A. Catalano*
Affiliation:
Solarex Corporation,Newtown, PA
*
1 present address: National Renewable Energy Laboratory, Golden Colorado, 80401
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Abstract

Thin-film, n-channel transistors were fabricated in hydrogenated amorphous silicon and silicon- germanium thin films using ion implantation to form source and drain regions. The germanium alloy content in the films were: 0, 15, and 25 at % For each content of germanium, the annealing temperature and time necessary to activate the implant, without degrading device performance due to hydrogen effusion, was determined. The time necessary to anneal aluminum to form ohmic contacts at the optimal anneal temperature (260°C) was also determined. Thin-film transistors were characterized, and important device parameters such as: saturation mobility, threshold voltage, subthreshold swing, and ON-OFF current ratio were determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 907
Copyright
Copyright © Materials Research Society 1993

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References

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