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Amorphous Phase Trapping as a Result of Pulsed Laser Irradiation of Silicon

Published online by Cambridge University Press:  15 February 2011

R. F. Wood
R. F. Wood*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

It is concluded that large interface undercoolings of ˜ 300 deg are not likely to occur during pulsed laser annealing and that the observed liquid to amorphous phase transition is not a purely thermodynamic effect. It is then shown that the formation of the amorphous phase can be understood on the basis of a kinetic rate model which makes large undercoolings of the interface unnecessary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 83
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Science, U.S. Department of Energy, under contract W-7405-eng-26 with Union Carbide Corporation.

References

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