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Amorphous Domains in GaN Layers Grown on 6H-SiC by MBE

Published online by Cambridge University Press:  10 February 2011

P. Vermaut ,
V. Potin ,
P. Ruterana ,
A. Hairme ,
G. Nouet ,
A. Salvador  and
H. Morkoç
P. Vermaut
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
V. Potin
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
A. Hairme
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
A. Salvador
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL 61801 [email protected]
H. Morkoç
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL 61801 [email protected]
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Abstract

Using N-rich growth conditions, amorphous domains were formed in the initial stage of a cyclotron assisted MBE of GaN grown over 6H-SiC (0001) without any buffer layer. These domains are facetted along {1010} prismatic planes. Their density is about 1010cm-2 and they are mainly located in a 50 nm layer close to the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 429
Copyright
Copyright © Materials Research Society 1998

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