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Amorphous Crystalline Silicon Heterojunction with Silicon Nitride Buffer Layer

Published online by Cambridge University Press:  17 March 2011

G. Claudio ,
R. De Rosa ,
F. Roca ,
D. Caputo  and
M. Tucci
G. Claudio
Affiliation:
ENEA - Research Centre, Localitá Granatello-80055 Portici (Na), Italy
R. De Rosa
Affiliation:
ENEA - Research Centre, Localitá Granatello-80055 Portici (Na), Italy
F. Roca
Affiliation:
ENEA - Research Centre, Localitá Granatello-80055 Portici (Na), Italy
D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome, Italy
M. Tucci
Affiliation:
ENEA - Research Centre, Localitá Granatello-80055 Portici (Na), Italy
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Abstract

In this work we study the possibility to use amorphous silicon nitride, grown by plasma, as an alternative way to realize buffer layer in a-Si:H/c-Si heterostructure. We experimented several growing condition for silicon nitride depending on deposition parameters, obtaining samples highly transparent and with optical gap varying in the range 2.4 – 5.2 eV. We found evidence that the gap of the material is principally due to the NH3/N2 ratio. The very low absorption obtainable on this material was successfully utilized to increase the short circuit current density of the device respect to the standard cell with intrinsic amorphous silicon buffer, particularly in the low wavelength region as confirmed by quantum yield measurements. We optimized the thickness of the SiNx buffer layer respect to the photovoltaic parameters of the solar cell. A 0.5 nm thick SiNx ensures good photogeneration in blue region of the visible spectrum and does not appreciably degrade the transport mechanism of the heterojunction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A13.4
Copyright
Copyright © Materials Research Society 2000

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References

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