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Ammonothermal Crystallization of AlN Crystals

Published online by Cambridge University Press:  15 February 2011

Alexander I. Motchanyy
Affiliation:
Russian Research Institute for the Synthesis of Materials (VNIISIMS), 1 Institutskaya St., Alexandrov 601650, Vladimir District, Russia
Alexey A. Reu
Affiliation:
Russian Research Institute for the Synthesis of Materials (VNIISIMS), 1 Institutskaya St., Alexandrov 601650, Vladimir District, Russia
Vladimir S. Kovalenko
Affiliation:
Russian Research Institute for the Synthesis of Materials (VNIISIMS), 1 Institutskaya St., Alexandrov 601650, Vladimir District, Russia
Vladimir G. Balakirev
Affiliation:
Russian Research Institute for the Synthesis of Materials (VNIISIMS), 1 Institutskaya St., Alexandrov 601650, Vladimir District, Russia
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Abstract

III-Nitrides (GaN, AlN and other compounds) have attracted vast interest due to their unique properties and potential applications in optoelectronic devices operating in the blue and UV spectral regions and for the construction of electronic devices capable of operating under high power and high temperature conditions.

Nanocrystalline AlN powder were obtained by AMMONO method, in which nitridization of Al metal occurs in highly chemical active supercritical ammonia using both NH4Cl as mineralizer. The experiments were performed in the temperature range of 350-550 °C and pressure of 80-120 MPa in stainless steel autoclaves for up to 5 days. Nanocrystalline AlN were spontaneously nucleated on the lower walls of the autoclaves. The obtained AlN powder was characterized by X-ray diffraction. Nanocrystalline AlN powders with average crystallite size 20-30 nm were produced in the temperature range of 450-550 °C.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Nakamura, S., Mat. Res. Soc. Bull. 22, 29 (1997).Google Scholar
2 Ponce, F.A., Bour, D.P., Nature 386, 351 (1997).Google Scholar
3 Strite, S., Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
4 Porowski, S., Grzegorg, I., J. Crystal Growth 178, 175 (1997).Google Scholar
5 Nakamura, S., Science 281, 956(1998).Google Scholar
6 Dwilinski, R., Doradzinski, R., Garczynski, J et al. , MRS Internet J. Nitride Semicond. Res. 3, 25 (1998).Google Scholar
7 Lan, Y.C., Chen, X.L., Cao, Y.G. et al. , J. Crystal Growth 207, 247 (1999).Google Scholar
8 Chen, X.L., Cao, Y.C., Lan, Y.C. et al. , J. Crystal Growth 209, 208 (1999).Google Scholar
9 Ketchum, D.R., Kolis, J.W., J. Crystal Growth 222, 431 (2001).Google Scholar
10 Pearton, S.J., Shul, R.J., Pen, F., MRS Internet J. Nitride Semicond. Res. 5, 11 (2000).Google Scholar
11 Monemar, B., J. of Materials Science: Materials in Electronics 10, 227 (1999).Google Scholar