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Ambipolar injection in a submicron channel light-emitting tetracene transistor with distinct source and drain contacts

Published online by Cambridge University Press:  01 February 2011

J. Reynaert
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium also with ESAT, Katholieke Universiteit Leuven, Leuven, Belgium
D. Cheyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium also with ESAT, Katholieke Universiteit Leuven, Leuven, Belgium
D. Janssen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
V. I. Arkhipov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Borghs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Genoe
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
P. Heremans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Over the last decade, organic semiconductor thin film transistors have been the focus of many research groups because of their potential application in low-cost integrated circuits. Recently, an organic light-emitting field-effect transistor (OLEFET) was reported. In an OLEFET structure, optimal injection of both holes and electrons into the light-emitting layer are required for maximum quantum efficiency, whereas the gate serves as a controlling electrode. In this work, we achieved an OLFET structure with interdigitated hole-injecting Au and electron-injecting Ca contacts within a submicrometer channel length. Both contacts are bottom contacts to the upper-lying tetracene organic semiconductor. The study of IV-characteristics and light emission from these devices shined light on the underlying physics of the OLEFETs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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