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Alumina-Ti Interface Reactions Studied By AES And UPS

Published online by Cambridge University Press:  26 February 2011

H. Lefakis ,
M. Liehr ,
G. W. Rubloff  and
P. S. Ho
H. Lefakis
Affiliation:
IBM T J Watson Research Center, Yorktown Heights, New York10598
M. Liehr
Affiliation:
IBM T J Watson Research Center, Yorktown Heights, New York10598
G. W. Rubloff
Affiliation:
IBM T J Watson Research Center, Yorktown Heights, New York10598
P. S. Ho
Affiliation:
IBM T J Watson Research Center, Yorktown Heights, New York10598
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Abstract

The interaction of Ti with A12O3 under UHV conditions has been studied by AES and UPS. Ti was deposited by iterated and successively thicker evaporations (up to a total thickness of 91 Å) under UHV conditions onto the alumina substrate at room temperature. The oxide substrate was grown on Al/Si(111) in an adjacent VHV preparation chamber. The last deposition was followed by in situ annealing. It was found that, contrary to indications of thermodynamic considerations using bulk equilibrium data, Ti interacts strongly with alumina at room temperature, dissociating it to metallic Al and forming TiO2 at the interface. This reaction is limited, resulting in an interface width of ∼10 Å and allowing subsequent evaporations to homogeneously cover the products. Annealing to 500°C does not produce any evidence of outdiffusion or extensive interface reactions, implying that the interface oxide is stable and an effective barrier to Al (and/or Ti) diffusion up to this temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 133
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Taubenblatt, M.A. and Helms, C.R., J. Appl. Phys. 53, 9, 6308 (1982).Google Scholar
2. Butz, R.B., Rubloff, G.W. and Ho, P.S., J. Vac. Sci. Techn. A1, 2, 771 (1983).Google Scholar
3. Liehr, M., LeGoues, F.K., Rubloff, G.W. and Ho, P.S., J. Vac. Sci. Techn. A3, 3, 983 (1985).Google Scholar
4. Lefakis, H., Liehr, M., Rubloff, G.W. and Ho, P.S., to be published.Google Scholar
5. Lofton, C.P. and Swartz, W.E., Thin Solid Films 52, 271, (1978).Google Scholar
6. Coburn, J.W. and Kay, E., CRC Critical Rev. Solid State Sci. 4, 561, (1974).Google Scholar
7. Ho, P.S. and Lewis, J.E., Surf. Sci. 55, 335, (1976).Google Scholar
8. Liehr, M., Lefakis, H., LeGoues, F.K. and Rubloff, G.W., submitted for publication.Google Scholar
9. Kirk, R.W., in Techniques and Applications of Plasma Chemistry, edited by Hollahan, J.R. and Bell, A.T. (Wiley, New York, 1974), p. 347.Google Scholar
10. Davis, L.E., MacDonald, N.C., Palmberg, P.W., Riach, G.E. and Weber, R.E., Handbook of Auger Electron Spectroscopy, Physical Electronics, Eden Prairie, MN, 1976.Google Scholar
11. Katayama, Y., Kobayashi, K.L.I. and Shiraki, Y., Surf. Sci. 86, 549 (1979).Google Scholar
12. Almy, D.B., Foyt, D.C. and White, J.M., J. Electr. Spectrosc. Relat. Phen. 11, 129 (1977).Google Scholar
13. Simmons, G.W., J. Colloid Interf. Sci. 34, 343. (1970)Google Scholar
14. Solomon, J.S. and Baun, W.L., Surf. Sci. 51, 228 (1975)Google Scholar
15. Palmberg, P.W., Anal. Chem. 45, 549A (1973).Google Scholar
16. Hagström, S.B.M., Bachrach, R.Z., Bauer, R.S. and Flodström, S.A., Physica Scripta 16, 414 (1977).Google Scholar
17. Bianconi, A., Bachrach, R.Z., Hagström, S.B.M. and Flodström, S.A., Phys. Rev. B19, 6, 2837 (1979).Google Scholar
18. Eastman, D.E., Solid State Commun. 10, 933 (1972).Google Scholar
19. Henrich, V.E., Zeiger, H. J. and Reed, T.B., Phys. Rev. B 17, 4120 (1978).Google Scholar
20. Lo, W.J., Chung, Y.W. and Somorjai, G.A., Surf. Sci. 71, 199(1978).Google Scholar