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Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application

Published online by Cambridge University Press:  01 February 2011

Danielle Stodilka ,
A. P. Gerger ,
M. Hlad ,
P. Kumar ,
B. P. Gila ,
R. Singh ,
C. R. Abernathy ,
S. J. Pearton  and
F. Ren
Danielle Stodilka
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, P.O. Box 116400, Gainesville, FL, 32611, United States
A. P. Gerger
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
M. Hlad
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
P. Kumar
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
B. P. Gila
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
R. Singh
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
C. R. Abernathy
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
S. J. Pearton
Affiliation:
[email protected], University of Florida, Dept. of Materials Science and Engineering, Gainesville, FL, 32611, United States
F. Ren
Affiliation:
[email protected], University of Florida, Dept. of Chemical Engineering, Gainesville, FL, 32611, United States
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Abstract

Films of MgO and MgCaO ternaries were grown at low temperature as dielectrics on 6H-SiC by gas-source MBE. MgO grown at 300 and 400°C revealed crystallites textured toward the (111) orientation on SiC (0001). A solid-solution Mg.75Ca.25O ternary was grown having a minimal lattice mismatch and low root mean square (RMS) roughness of 0.5 nm. SiC pretreatments in UV-ozone reduced carbon contaminants on the surface of SiC, but resulted in the increase of fixed oxide charge in the oxide/SiC interface. Electrical breakdown fields >3.5 MV cm-1 and low density of interface states on the order of 1011 cm-2eV-1 were achieved for a Mg.75Ca.25O ternary grown at 300°C. These oxides are presented for the first time as low temperature alternatives to SiO2 gate dielectrics for SiC MOS applications.

Keywords

dielectricmolecular beam epitaxy (MBE)oxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B14-03
Copyright
Copyright © Materials Research Society 2006

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References

1 Harris, G. L. (ed), Properties of Silicon Carbide, EMIS Data Rev. Series, 13, INSPEC, Short Run Press, (and references therein),1995 Google Scholar
2 Lazar, H. R., Misra, V., Johnson, R. S., and Lucovsky, G., Appl. Phys. Lett., 79 (7) 973 (2001).Google Scholar
3 Afanas'ev, V. V., Stesmans, A, Chen, F., Campbell, S. A., Smith, R., Appl. Phys. Lett., 82 (6) 922 (2003).Google Scholar
4 Hellman, E. S. and Hartford, E. H., Appl. Phys. Lett., 64 (11) 1341–1343 (1994).Google Scholar
5 Niu, F., Hoerman, B. H. and Wessels, B. W., J. Vac. Sci. and Technol., B18, 2146 (2000).Google Scholar
6 Tarsa, E. J., Wu, X. H., Ibbetson, J. P., Speck, J. S., Zinck, J. J., Appl. Phys. Lett., 66, 3588 (1995).Google Scholar
7 Daude, N., Jouanin, C. and Gout, C., Phys. Rev. B, 15, 2399 (1977).Google Scholar
8 Doman, R. C., Barr, J. B., McNally, R. N., and Alper, A. M., J. Am. Ceram. Soc., 46{7}314 (1963).Google Scholar
9 Virojanadara, C., Johansson, L. I., Mat. Sci. Forum., Trans Tech Pub., 389–393, 701–704, (2002).Google Scholar
10 Afanas'ev, V. V. A, Stesmans, A, Bassler, M., Pensl, G., Schulz, M. J., and Harris, C. I., Appl. Phys. Lett., 68 (615) 2141 (1996).Google Scholar
11 Onstine, A.H., Gila, B.P., Kim, J., Herrero, A, Mehandru, R., Abernathy, C.R., Ren, F., Pearton, S.J.; SOTAPOCS XXXIX, Kopf, R.F., Baca, A.G., Ren, F., and Pearton, S.J., editors, PV 2003-11, p. 344, The Electrochemical Society Series, Pennington, NJ (2003)Google Scholar
12 Gao, K.Y., Seyller, Th., Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., and Leckey, R. G. C., Appl. Phys. Lett., 83 (9) 1830–1832 (2003).Google Scholar
13 Dhar, S., Song, Y. W., Feldman, L. C., Isaacs-Smith, T., Tin, C. C., Williams, J. R., Chung, G., Nishimura, T., Starodub, D., Gustafsson, T., and Garfunkel, E., Appl. Phys. Lett., 84 (9) 1498 (2004).Google Scholar