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Alternate Gate Oxides for Silicon Mosfets Using High-k Dielectrics

Published online by Cambridge University Press:  10 February 2011

C. A. Billman ,
P. H. Tan ,
K. J. Hubbard  and
D. G. Schlom
C. A. Billman
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, [email protected]
P. H. Tan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, [email protected]
K. J. Hubbard
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, [email protected]
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, [email protected]
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Abstract

High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitrides in contact with silicon at 1000 K. Using the Clausius-Mossotti equation and ionic polarizabilities, the K of all known inorganic compounds composed of Si-compatible binary oxides was estimated. A ranked list of alternate gate oxide candidates that are likely to possess both high K and silicon-compatibility is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 409
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1997), pp. 71–74.Google Scholar
2 Roy, P. K. and Kizilyalli, I. C., Appl. Phys. Lett. 72, 2835 (1998).10.1063/1.121473Google Scholar
3 Alers, G. B., Werder, D. J., Chabal, Y., Lu, H. C., Gusev, E. P., Garfunkel, E., Gustafsson, T., and Urdahl, R. S., Appl. Phys. Lett. 73, 1517 (1998).10.1063/1.122191Google Scholar
4 Autran, J.-L., Devine, R., Chaneliere, C., and Balland, B., IEEE Electron Device Lett. 18, 447 (1997).10.1109/55.622525Google Scholar
5 Kim, S.-O. and Kim, H. J., J. Vac. Sci. Technol. B 12, 3006 (1994).10.1116/1.587550Google Scholar
6 Kim, I., Ahn, S.-D., Cho, B., Ahn, S.-T., Lee, J. Y., Chun, J. S., and Lee, W., Jpn. J. Appl. Phys. 33, 6691 (1994).10.1143/JJAP.33.6691Google Scholar
7 Tung, R. T., Fujii, K., Kikuta, K., Chikaki, S., and Kikkawa, T., Appl. Phys. Lett. 70, 2386 (1997).10.1063/1.118880Google Scholar
8 Basceri, C., Streiffer, S. K., Kingon, A. I., and Waser, R., J. Appl. Phys. 82, 2497 (1997).10.1063/1.366062Google Scholar
9 Hubbard, K. J. and Schlom, D. G., J. Mater. Res. 11, 2757 (1996).10.1557/JMR.1996.0350Google Scholar
10 McKee, R. A., Walker, F. J., Chisholom, M. F., Phys. Rev. Lett. 81, 3014 (1998).10.1103/PhysRevLett.81.3014Google Scholar
11 McKee, R. A., Walker, F. J., Conner, J. R., Specht, E. D., Zelmon, D. E., Appl. Phys. Lett. 59, 782(1991).10.1063/1.105341Google Scholar
12 Ohnishi, T., Yoshimoto, M., Lee, G. H., Maeda, T., and Koinuma, H., J. Vac. Sci. Technol. A 15, 2469 (1997).10.1116/1.580911Google Scholar
13 , Landolt-Bömstein: Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 17b, edited by Madelung, O., Schulz, M., and Weiss, H. (Springer-Verlag, Berlin, 1982), pp. 18, 25, 2931–2934.Google Scholar
14 Galtier, M., Montaner, A., and Vidal, G., J. Phys. Chem. Solids 33, 2295 (1972).10.1016/S0022-3697(72)80304-4Google Scholar
15 Shannon, R. D., J. Appl. Phys. 73, 348 (1993).10.1063/1.353856Google Scholar
16 Yoshimoto, M., Shimozono, K., Maeda, T., Ohnishi, T., Kumagai, M., Chikyow, T., Ishiyama, O., Shinohara, M., and Koinuma, H., Jpn. J. Appl. Phys. 34, L688 (1995).10.1143/JJAP.34.L688Google Scholar
17 , Landolt-Börnstein: Zahlenwerte und Funktionen aus Physik, Chemie, Astronomie, Geophysik, und Technik, 6th Ed., Vol. II, Part 6, edited by Bartels, J., Bruggencate, P. Ten, Hausen, H., Hellwege, K. H., Schäfer, K. L., and Schmidt, E. (Springer-Verlag, Berlin, 1959), pp. 455, 480–485.Google Scholar
18 The Oxide Handbook, 2nd Ed., edited by Samsonov, G. V. (IFI/Plenum, New York, 1982), p. 213.10.1007/978-1-4757-1613-9Google Scholar
19 Maeda, T., Yoshimoto, M., Ohnishi, T., Lee, G. H., and Koinuma, H., J. Cryst. Growth 177, 95 (1997).10.1016/S0022-0248(96)00842-1Google Scholar
20 Yadavalli, S., Yang, M. H., and Flynn, C. P., Phys. Rev. B 41, 7961 (1990).10.1103/PhysRevB.41.7961Google Scholar
21 , Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, Vol. 18, edited by Hellwege, K.-H. and Hellwege, A. M. (Springer-Verlag, Berlin, 1984), pp. 201, 211.Google Scholar
22 Chu, T. L., Francombe, M. H., Gruber, G. A., Oberly, J. J., and Tallman, R. L., Deposition of Silicon on Insulating Substrates, Report No. AFCRL-65-574 (Westinghouse Research Laboratories, Pittsburgh, 1965). See especially pp. 31-34 and pp. 41–44. (NTIS ID No. AD-619 992)Google Scholar
23 Kado, Y. and Arita, Y., J. Appl. Phys. 61, 2398 (1987).10.1063/1.337957Google Scholar
24 Hirata, A., Saiki, K., and Koma, A., Appl. Phys. Lett. 65, 3182 (1994).10.1063/1.112474Google Scholar
25 Yoshimoto, M., Shimozono, K., Maeda, T., Ohnishi, T., Kumagai, M., Chikyow, T., Ishiyama, O., Shinohara, M., and Koinuma, H., Jpn. J. Appl. Phys. 34, L688 (1995).10.1143/JJAP.34.L688Google Scholar
26 Tye, L., El-Masry, N. A., Chikyow, T., Mclarty, P., and Bedair, S. M., Appl. Phys. Lett. 65, 3081 (1994).10.1063/1.112467Google Scholar
27 Mori, H. and Ishiwara, H., Jpn. J. Appl. Phys. 30, L1415 (1991).10.1143/JJAP.30.L1415Google Scholar
28 Chikyow, T., Bedair, S.M., Tye, L., and El-Masry, N.A., Appl. Phys. Lett. 65, 1030 (1994).10.1063/1.113011Google Scholar
29 Inoue, T., Ohsuna, T., Obara, Y., Yamamoto, Y., Satoh, M., and Sakurai, Y., Jpn. J. Appl. Phys. 32, 1765 (1993).10.1143/JJAP.32.1765Google Scholar
30 Tan, P. H. and Schlom, D. G., submitted to J. Mater. Res.Google Scholar
31 Samara, G. A., J. Appl. Phys. 68, 4214 (1990).10.1063/1.346211Google Scholar
32 NIST Crystal Data 1997, a CD-ROM database (International Centre for Diffraction Data, Newton Square, PA, 1997).Google Scholar
33 Shannon, R. D., Acta Cryst. A 32, 751 (1976).10.1107/S0567739476001551Google Scholar