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AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  03 September 2012

Andrey Nikolaev ,
Irina Nikitina ,
Andrey Zubrilov ,
Marina Mynbaeva ,
Yuriy Melnik  and
Vladimir Dmitriev
Andrey Nikolaev
Affiliation:
Ioffe Institute and Crystal Growth Research Center, St. Petersburg, 194021, Russia
Irina Nikitina
Affiliation:
Ioffe Institute and Crystal Growth Research Center, St. Petersburg, 194021, Russia
Andrey Zubrilov
Affiliation:
Ioffe Institute and Crystal Growth Research Center, St. Petersburg, 194021, Russia
Marina Mynbaeva
Affiliation:
Ioffe Institute and Crystal Growth Research Center, St. Petersburg, 194021, Russia
Yuriy Melnik
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, USA
Vladimir Dmitriev
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, USA
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Abstract

We report on AlN wafers fabricated by hydride vapor phase epitaxy (HVPE). AlN thick layers were grown on Si substrates by HVPE. Growth rate was up to 60 microns per hour. After the growth of AlN layers, initial substrates were removed resulting in free-standing AlN wafers. The maximum thickness of AlN layer was about 1 mm. AlN free-standing single crystal wafers with a thickness ranging from 0.05 to 0.8 mm were studied by x-ray diffraction, transmission electron microscopy, optical absorption, and cathodoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W6.5
Copyright
Copyright © Materials Research Society 1999

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References

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