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AlN Acoustic Wave Sensors Using Excimer Laser Micromachining Techniques

Published online by Cambridge University Press:  17 March 2011

Feng Zhong ,
Changhe Huang  and
Gregory W. Auner
Feng Zhong
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Changhe Huang
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Gregory W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
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Abstract

Aluminum Nitride (AlN) is a promising piezoelectric material for Acoustic Wave (AW) sensor application due to its high acoustic velocity, linear thermal coefficient and high electromechanical coupling coefficient. Epitaxial AlN thin films were successfully grown on the Sapphire C plane substrate by Plasma Source Molecular Beam Epitaxy (PSMBE). Standard two-port resonator structures were fabricated on the AlN/Sapphire by standard photolithography. Excimer laser micromachining techniques were utilized to fabricate microgroove gratings on the surface of thin film. Beside Surface Acoustic Wave (SAW), Surface Transverse Wave (STW) propagation was also found on the devices with those microgroove and classical metal strip gratings. Laser micromachinined microgroove gratings were found to enhance the propagation of STW. Further, sensors based on STW showed little attenuation in the liquid environment, while sensors based on SAW suffered excess loss when exposed to liquid.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.28
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Motamedi, M. E. and White, R. M., Chapter 3 Acoustic Sensor in Semiconductor Sensors, edited by Sze, S. M., 97, (John Wiley & Sons, Inc., 1994)Google Scholar
2. Tomabechi, S., Kameda, S., Masu, K. and Tsubouchi, K., ‘2.4 GHz Front-End Multi-Track AlN/α-Al2O3 SAW Matched Filter’, IEEE Ultrasonics Symp. Proc., 73, 1998 Google Scholar
3. Cameron, T. P., Hunt, W. D., Liaw, H. M. and Hickernell, F. S., ‘Waveguide-coupled Resonator Filters on AlN on Silicon’, IEEE Ultrasonics Symp. Proc., 371, 1994 Google Scholar
4. Auner, G. W., Kuo, P. K., Lu, Y. S. and Wu, Z. L., ‘Characterization of Aluminum Nitride Thin Films Grown by Plasma Source Molecular Beam Epitaxy’, 362, SPIE V2428Google Scholar
5. Krupitskaya, R. Y. and Auner, G. W., ‘Optical Characterization of AlN Films Grown by Plasma Source Molecular Beam Epitaxy’, J. Appl. Phys., V84 (5), 2861, 1998 Google Scholar
6. Zhao, Q., Lukitsch, M., Xu, J., Auner, G. W., Niak, R. and Kuo, P-K. ‘Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining’ MRS Internet J. Nitride Semicond. Res. 5S1, W11.69 (2000).Google Scholar
7. Cambell, C., Surface Acoustic Wave Devices and Their Signal Processing Application, 454, (Academic Press, Inc., 1989)Google Scholar
8. Ballandras, S., Bigler, E., Daniau, W., Py, J., Pakfar, A., Marianneau, G., and Martin, G., ‘New Results on Surface Transverse Wave Resonators Built with Different Combinations of Groove and Strip Gratings’, IEEE Ultrasonics Symp. Proc., 217, 1998 Google Scholar
9. Carlotti, G., Hickernell, F. S., Liaw, H. M., Palmieri, L., Socina, G., and Verona, E., ‘The Elastic Constants of Sputtered Aluminum Nitride films’, IEEE Ultrasonics Symp. Proc., 353, 1995 Google Scholar