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All-Semiconducting Nanotube Networks: Towards High Performance Printed Nanoelectronics

Published online by Cambridge University Press:  17 March 2011

N. Rouhi ,
D. Jain ,
K. Zand  and
P. J. Burke
N. Rouhi
Affiliation:
Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA 92697, [email protected]
D. Jain
Affiliation:
Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA 92697, [email protected]
K. Zand
Affiliation:
Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA 92697, [email protected]
P. J. Burke
Affiliation:
Electrical Engineering and Computer Science, University of California-Irvine, Irvine, CA 92697, [email protected]
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Abstract

In this work, we present progress towards devices fabrication using all semiconducting nanotubes as the starting material. Individual nanotubes are known to have intrinsic mobility of more than 10,000 cm2/V-s but using a network of nanotubes will decrease this mobility because of tube-tube screening effect and junction resistance. Here we are using solution-based deposition of purified 99% semiconducting single-walled nanotubes as the channel in field effect transistors. DC analysis of devices’ characterization shows a high mobility, more than 50 cm2/Vs, and good on/off ratio in the range of more than 103 and 104. A critical issue is the ink formulation and dependence of electronic properties on the nanotube density after deposition. In addition, the channel length also plays an important role in controlling both mobility and on/off ratio.

Keywords

nanostructuresemiconductingsolution deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1283: Symposium B – Carbon-Based Electronic Devices—Processing, Performance and Reliability , 2011 , mrsf10-1283-b01-05
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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