Published online by Cambridge University Press: 10 February 2011
The liquid embossing process, devices made by this process, and their characteristics are presented. Structures fabricated and discussed here include: conductive lines with cross line resistance greater than 100 GΩ and resistivities 4 times that of the bulk material, multilayer structures with etched sacrificial materials, vias that conduct through an embossed insulating layer, photodetectors made with nanocrystal solutions of CdSe, and all printed inorganic field effect transistors.