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Alloying and selenization of Cu-In stacked layers evaporated onto large areas

Published online by Cambridge University Press:  21 March 2011

Raquel Caballero ,
Cecilia Guillén  and
Rocío Bayón
Raquel Caballero
Affiliation:
Departamento de Energías Renovables (CIEMAT) Avd. Complutense, 22, 28040, Madrid, SPAIN
Cecilia Guillén
Affiliation:
Departamento de Energías Renovables (CIEMAT) Avd. Complutense, 22, 28040, Madrid, SPAIN
Rocío Bayón
Affiliation:
Departamento de Energías Renovables (CIEMAT) Avd. Complutense, 22, 28040, Madrid, SPAIN
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Abstract

In this work, Cu and In thin films, as precursors for CuInSe2 (CIS) formation, have been deposited on glass substrate up to 30 × 30 cm2 area using an electron beam evaporator in sequential processes. In order to obtain a similar global composition, three types of sequential processes of evaporation: A) Cu/In/Cu/In, B) Cu/In/Cu/In/Cu/In and C) In/Cu/In/Cu have been tested. As-grown thin films were studied at room temperature and after 120° C annealing. XRD analysis of these films showed mainly the CuIn2−x (0≤ × ≤ 1) phase at room temperature, and Cu11In9 after annealing at 120° C. After alloying, the films were selenized at temperature between 250° and 400° C in vacuum using elemental selenium vapour. XRD of the selenized thin films corresponding to In/Cu/In/Cu sequence and previously annealing at 120° C, showed the major presence of the polycrystalline chalcopyrite structure CuInSe2 with preferential orientation (112) plane at temperature as low as 250° C. From SEM studies and profilometer measurements a decrease in the mean roughness could be observed after annealing at 120° C. In contrast the resistivity of the films increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.2
Copyright
Copyright © Materials Research Society 2001

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References

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