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All CO2-Processed Fluoropolymer-Containing Photoresist Systems

Published online by Cambridge University Press:  15 March 2011

Devin Flowers ,
Erik Hoggan ,
Joseph M. DeSimone  and
Ruben Carbonell
Devin Flowers
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Venable Hall CB# 3290, Chapel Hill, NC 27599
Erik Hoggan
Affiliation:
Department of Chemical Engineering, North Carolina State University, 1017 Main Campus Dr. Suite 3600, Raleigh, NC 27606
Joseph M. DeSimone
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Venable Hall CB# 3290, Chapel Hill, NC 27599 Department of Chemical Engineering, North Carolina State University, 1017 Main Campus Dr. Suite 3600, Raleigh, NC 27606
Ruben Carbonell
Affiliation:
Department of Chemical Engineering, North Carolina State University, 1017 Main Campus Dr. Suite 3600, Raleigh, NC 27606
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Abstract

Currently, the microlithography industry creates large amounts of organic and aqueous wastes in the production of semiconductors. Using carbon dioxide can possibly eliminate the majority of these waste solvents as well as eliminate the image collapse problems shown with aqueous base development. We will discuss the use of carbon dioxide to replace the most solvent intensive steps of the microlithography process, spin coating, developing, and stripping. However, before CO2 can replace conventional solvents, photoresist systems must be designed and synthesized to be compatible with CO2. These photoresist systems must be soluble in liquid CO2 to insure that thin-uniform coatings can be produced by spin coating while maintaining characteristics of conventional resist systems such as low absorbance, high sensitivity, solubility contrast, good resolution, and etch resistance. Using our CO2compatible resist system, we will demonstrate the ability of CO2 to spin coat uniform thin-films which (after exposing and PEB) can be developed using scCO2 to produce lithography features that may be stripped in CO2. Thus, revealing the enormous potential of CO2 to provide the microlithography industry an opportunity to escape its water and organic solvent dependence as it moves toward 157nm lithography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y2.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Moore, G., Proc. SPIE Int. Soc. Opt. Eng., 2438, pp.2–17, 1994.Google Scholar
2. Kunz, R. R., Bloomstein, T. M., Hardy, D. E., Goodman, R. B., Downs, D. K., Curtin, J. E., “Outlook for 157 nm Resist Design” J. Vac. Sci. Technol. B 17(6), pp. 3267–3272, 1999.Google Scholar
3. DeSimone, J. M., Guan, Z., Elsbernd, C. S., “Synthesis of Fluoropolymers in Supercritical Carbon Dioxide” Science, 257, pp. 945–947, 1992. US 5, 739, 223.Google Scholar
4. Okoroanyanwu, U., J. Vac. Sci. Technol. B 18(6), pp. 3381–3387, 2000.Google Scholar
5. McAdams, C. L., Flowers, D., Hoggan, E. N., Carbonell, R. G., DeSimone, J. M., “All CO2-Based Processing for 193-nm and 157-nm Photolithography” Submitted to Proc. SPIE Int. Soc. Opt. Eng., 2001, 4345, Paper # 127.Google Scholar
6. Mason, M., Sematech Next Generation Lithography Workshop, 1998.Google Scholar
7.SEMI E10-96 Standard, “Guideline for Definition and Measurement of Equipment Reliability, Availability, and Maintainability (RAM),” Semiconductor Equipment and Materials International, San Jose, CA.Google Scholar
8. Tanaka, H., J. Appl. Phys. 32, 6059, 1993 Google Scholar
9. Goldfarb, D. L., Pablo, J. J. de, Nealey, P. F., Simons, J. P., Moreau, W. M., Angelopoulos, M. J. Vac. Sci. Technol. B 18(6), pp. 3313–3317, 2000 Google Scholar