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Alignment of Adsorbate-Induced Defects on Silicon(001) 2×1 Observed with STM

Published online by Cambridge University Press:  21 February 2011

J. V. Seiple  and
J. P. Pelz
J. V. Seiple
Affiliation:
The Ohio State University, Department of Physics, 174 W. 18th Ave., Columbus, OH 43210
J. P. Pelz
Affiliation:
The Ohio State University, Department of Physics, 174 W. 18th Ave., Columbus, OH 43210
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Abstract

We have observed that a build-up of gas-phase adsorbates on Si(001) followed by mild annealing at temperatures in the range 500 - 800°C can lead to a quasi-periodic array of line defects, which in STM images appear similar to lines of dimer vacancies aligned perpendicular to the surface dimer rows. These line defects can be eliminated by annealing at temperatures above 900°C, indicating that Ni contamination is not the cause. Adsorbed O2 or H2O followed by an anneal do not exhibit the same behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 25
Copyright
Copyright © Materials Research Society 1994

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References

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