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Al-Ge Phase Separation During Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

C. D. Adams ,
M. Atzmon ,
Y.-T. Cheng  and
D. J. Srolovitz
C. D. Adams
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109
M. Atzmon
Affiliation:
Department of Nuclear Engineering, The University of Michigan, Ann Arbor, MI 48109.
Y.-T. Cheng
Affiliation:
General Motors Research Laboratories, Physical Chemistry Department, Warren, MI 48090–9055
D. J. Srolovitz
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109
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Abstract

The phase- and grain microstructure and surface morphology of Al-Ge films formed by electron beam co-deposition have been studied as a function of the deposition temperature. X-ray diffraction, scanning- and transmission electron microscopy with x-ray fluorescence analysis were used to characterize the films. At room temperature and above, crystalline, phase separated films are obtained. The phase dimensions and surface roughness were observed to increase with the deposition temperature and the dependence yields activation energies for atomic migration consistent with a surface diffusion mechanism. The surface roughness is observed to reflect the microstructure under the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 33
Copyright
Copyright © Materials Research Society 1990

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