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AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device

Published online by Cambridge University Press:  01 February 2011

Seikoh Yoshida ,
Nariaki Ikeda ,
Jiang Li ,
Kohji Hataya ,
Takahiro Wada  and
Hironari Takehara
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Nariaki Ikeda
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Jiang Li
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Kohji Hataya
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Takahiro Wada
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Hironari Takehara
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
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Abstruct:

We have proposed a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure in order to obtain a very low on-voltage. This diode has a dual Schottky structure of a very low Schottky barrier metal and a high Schottky barrier metal for obtaining a low on-voltage. The leakage current at a reverse bias was suppressed by the pinch-off based on field effect of a higher Schottky barrier metal, resulting in increasing the reverse breakdown voltage.

In this paper, we carried out a planer-type FESBD for a large current operation. The AlGaN/GaN heterostructure was grown by a metalorganic chemical vapor deposition (MOCVD). A dual Schottky structure was fabricated using Ti/Al and Pt. An ohmic electrode was also Ti/Al. As a result, the on voltage of FESBD was below 0.1 V. The reverse breakdown voltage was also over 400 V by pinch-off effect. The switching time of the diode was shorter than 3 ns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E6.3
Copyright
Copyright © Materials Research Society 2005

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References

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