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Ale Growth of Transparent Conductors

Published online by Cambridge University Press:  10 February 2011

Mikko Rit ,
Timo Asikainen ,
Markku Leskelä  and
Jarmo Skarp
Mikko Rit
Affiliation:
Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Timo Asikainen
Affiliation:
Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Markku Leskelä
Affiliation:
Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Jarmo Skarp
Affiliation:
Microchemistry Ltd, P.O. Box 45, FIN-02151 Espoo, Finland
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Abstract

Owing to its self-limiting growth mechanism the Atomic Layer Epitaxy (ALE) technique is capable of growing uniform high quality thin films on large area substrates. Therefore, ALE is an attractive choice for depositing transparent electrically conducting films for large area applications, such as solar cells and flat panel displays. In this paper studies on ALE growth of In2O3 and ZnO based transparent conducting thin films will be presented. In2O3, In2O3:Sn and In 2O3:F films were grown at 500 °C and their lowest resistivities were about 3 x 10-3, 2 x 10-3 and 6 x 10-4 Ωcm, respectively. Low temperature (120 - 350 °C) ALE deposition processes were developed for ZnO and ZnO:AI films, the latter having resistivities as low as 8 x 10-4 Ωcm. A straightforward scale-up of the ZnO process from 5 x 5 to 30 x 30 cm 2 substrate size was also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 513
Copyright
Copyright © Materials Research Society 1996

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