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Al Induced Reconstructions on the Si(111) Surfaces Studied by Scanning Tunneling Microscopy

Published online by Cambridge University Press:  15 February 2011

Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
Katsuya Takaoka
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
Tomoshige Sato
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
Takashi Sueyoshi
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
Masashi Iwatsuki
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
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Abstract

The atomic arrangements of the α-7×7 phase and incommensurate phases of Al adsorbed Si(111) surface are investigated respectively by scanning tunneling microscopy (STM). STM images of α-7×7 surface reveal that characteristic triangular structures consisting of three Al adatoms situated on the center part of each half unit cell. The three Al adatoms form a triangular cluster and are bonded to the center adatoms. In this situation, the dangling bond of the center adatom is saturated, which would modify its electronic structure into non-metallic. The incommensurate phase is consists of approximately 9×9 structures, which are separated each other with misfit dislocations. In the “9×9” structure, individual Al atom is visible arranged in threefold symmetry.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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