Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T14:43:17.119Z Has data issue: false hasContentIssue false
  • English
  • Français

Al Diffusion in Polycrystalline Cu

Published online by Cambridge University Press:  01 February 2011

Florian Gstrein ,
Harold Kennel ,
Andre Budrevich ,
Barbara Miner ,
John Plombon  and
Ebrahim Andideh
Florian Gstrein
Affiliation:
[email protected], Intel Corporation, Components Research, 2501 NW 229th Avenue, RA3-252, .Hillsboro, OR, .97124, United States, 971-214-1605
Harold Kennel
Affiliation:
[email protected], Intel Corporation, Hillsboro, OR, 97214, United States
Andre Budrevich
Affiliation:
[email protected], Intel Corporation, Hillsboro, OR, 97214, United States
Barbara Miner
Affiliation:
[email protected], Intel Corporation, Hillsboro, OR, 97214, United States
John Plombon
Affiliation:
[email protected], Intel Corporation, Hillsboro, OR, 97214, United States
Ebrahim Andideh
Affiliation:
[email protected], Intel Corporation, Hillsboro, OR, 97214, United States
Get access

Abstract

The diffusion of aluminum (Al) from a source sandwiched between polycrystalline copper (Cu) thin films was investigated as a function of time and temperature through secondary ion mass spectroscopy (SIMS) and continuum simulations. Extracted diffusion coefficients for the bulk were in line with literature values. In order to simulate the experimentally derived diffusion profiles at temperatures where bulk diffusion is not the dominant diffusion mechanism (room temperature to 350 °C), it was necessary to explicitly include the re-distribution of Al as a result of Cu grain growth during anneal. Aluminum has the tendency to segregate to the Cu/liner and Cu/etch stop (ES) interface. The tendency of Al to segregate to the liner is ten times stronger for ruthenium (Ru) than for tantalum (Ta). In 100 nm wide dual damascene structures lined with Ru, this segregation behavior was responsible for the Al depletion in bulk Cu and for the Al depletion at the Cu/ES interface.

Keywords

CuAldiffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N04-06
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Isobayashi, A., Enomoto, Y., Yamada, H., Takahashi, S., Kadomura, S. IEEE IEDM Technical Digest., 13-15 Dec. 2004 p 953–956 Google Scholar
2. Tonegawa, T., Hiroi, M., Motoyama, K., Fujii, K., and Miyamoto, H., in Proc. IEEE IITC., 2003, pp. 216–218 Google Scholar
3. Matsubara, Y., Komuro, M., Onodera, T., Ikarashi, N., Hayashi, Y., and Sekine, M., in VLSI Symp. Tech. Dig., 2003, pp. 127–128 Google Scholar
4. Aluminum implanted in Cu was used as a standard to determine the relative sensitivity factor of Al in Cu. CsAl+ ion intensities were point-to-point normalized to the Cs+ signal.Google Scholar
5. Banerjee, S., “Modeling of Dopant Incorporation in Polysilicon Incorporating Effects of Grain Boundary Motion”, M.S. Thesis, Boston University, 1996.Google Scholar
6. Kaur, and Gust, , in “Handbook of Grain and Interphase Boundary Diffusion Data”, Vol. 1 (Ziegler Press, Stuttgart, 1989) p. 197 Google Scholar
7. Oikawa, H., Obara, T., and Karashima, S., Metall. Trans. 1 (1970) 2969 Google Scholar
8. Gribelyuk, M. A., Malhotra, S. G., Locke, P. S., DeHaven, P., Fluegel, J., Parks, C., Simon, A. H., Murphy, R., Proc. IEEE IITC, 2000, pp. 188–190 Google Scholar