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Air-Bridge Electron-Beam Lithography for Coplanar Millimeter Wave Circuits

Published online by Cambridge University Press:  25 February 2011

William H. Haydl ,
R. J. Bojko  and
L. F. Eastman
William H. Haydl
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853. On leave from the Institute for Applied Solid State Physics of the Fraunhofer Ges. (IAF-FHG), D-7800 Freiburg, Germany
R. J. Bojko
Affiliation:
School of Electrical Engineering, and National Nanofabrication Facility (NNF), Cornell University, Ithaca, NY 14853
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

In the development of air bridges for low capacitance crossovers, resists of 3–6μm thickness a e needed, which calls for special alignment techniques. A technique has been developed for an air bridge tec nology, which is realized entirely by electron beam lithography. Such an all-electron-beam technique for sub-micron devices and ultrahigh frequency circuits, results in a fast turn-around-time in the development of integrated circuits.

Gold plated air bridges with 20 to 120 pm span, 5–60 μm width, 2.6 pm height, and 2–4 μm thickness, were realized on GaAs and InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 275
Copyright
Copyright © Materials Research Society 1992

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References

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