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AFM, XPS and XRD Studies of W Films Growth by Lpcvd Onto Tin Substrates

Published online by Cambridge University Press:  15 February 2011

S. Santucci
Affiliation:
Dipartimento di Fisica Universiti di L'Aquila, 67010 Coppito (AQ) -, Italy
L. Lozzi
Affiliation:
Dipartimento di Fisica Universiti di L'Aquila, 67010 Coppito (AQ) -, Italy
M. Passacantando
Affiliation:
Dipartimento di Fisica Universiti di L'Aquila, 67010 Coppito (AQ) -, Italy
P. Picozzi
Affiliation:
Dipartimento di Fisica Universiti di L'Aquila, 67010 Coppito (AQ) -, Italy
L. Grifoni
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
R. Diamanti
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
G. Moccia
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
R. Alfonsetti
Affiliation:
Texas Instruments - Italia - Nucleo Industriale Avezzano, 67051 Avezzano (AQ) -, Italy
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Abstract

Thin films of W were grown using the low pressure chemical-vapour deposition technique in WF6/SiH4 flow on a TiN layer obtained by annealing in nitrogen atmosphere Ti films for different times. The investigation of W nucleation was followed by Atomic Force Microscopy in air. The Atomic Force images taken after fixed time of exposure of the TiN layer to the WF6/SiH4 flow show, on the surface of the W films, the presence of columnar structures only when the TiN films were obtained with forming times below 100 minutes. To investigate this effect X-ray Photoelectron Spectroscopy depth profile and X-Ray Diffraction measurements were performed on the obtained W/TiN films. The results show the deeper penetration of the nitrogen into the titanium layer with the longer forming time and a non stoichiometric composition of TiN interfacial layer which strongly influences the W nucleation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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