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AFM Study of the Fluence-Dependent Modification of the Surface of YSZ Due to Argon Ion Irradiation

Published online by Cambridge University Press:  01 February 2011

Marilyn E. Hawley ,
Igor O. Usov ,
Jonghan Won  and
Kurt E. Sickafus
Marilyn E. Hawley
Affiliation:
[email protected], Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, New Mexico, United States
Igor O. Usov
Affiliation:
[email protected], Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, New Mexico, United States
Jonghan Won
Affiliation:
[email protected], United States
Kurt E. Sickafus
Affiliation:
[email protected], Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, New Mexico, United States
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Abstract

Yittria stabilized zirconia (YSZ) has long been of interest as a promising material for nuclear energy applications. It is the cubic form of zirconium oxide stabilized at room temperature by the addition of yttria. Previous studies of radiation damage in YSZ focused primarily on microstructural changes in the bulk or in the near surface layer whereas irradiation induced changes on the surface received little attention. Here we use atomic force microscopy, AFM, to study the fluence-dependent generation of surface modifications to YSZ due to 150 keV Ar+ ion implantation at fluences from 3×1015 to 1×1017 ions/cm2. The microstructural changes in the near surface region were previously investigated by Rutherford backscattering spectrometry in channeling geometry (RBS/C). Further, we investigated implantation in (100), (110), and (111) oriented single crystals of YSZ to explore differences in crystal orientation sensitivity to damage to ion irradiation. At the highest fluence, a dense packing of large round surface hillocks was observed. The ion induced surface modifications revealed by AFM differ slightly from the bulk lattice damage measured by RBS, although both indicate that under these implantation conditions, the (110) oriented crystal shows the most radiation damage resistance. The mean size of the hillocks scaled with concentration of implanted Ar atoms.

Keywords

Arion-implantationscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1264: Symposia Z/BB – Basic Actinide Science and Materials for Nuclear Applications , 2010 , 1264-BB02-09
Copyright
Copyright © Materials Research Society 2010

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References

1 Saude, S. Grynszpan, R.I. Anwand, W. Brauer, G. Grob, J.J. Gall, Y. Le, Nucl. Instr. Met Meth. h. B216, 156 (2004).Google Scholar
2 He, Xe Hojou, K. Hojo, T. Sasajima, N. Nitani, N. Yamashita, T. Minato, K. and S., Furuno, in Application of Accelerators in Research and Industry: 17th Int. Conf., ed. Daggan, J.L. and Morgan, I.L. (American Institutes of Physics, 2003) pp. 647–652.Google Scholar
3 Thome, L. Gentils, A. Jagielski, J. Garrido, F. and Thome, T. Vacuum 81, 1264 (2007).Google Scholar
4 Hojo, T. Aihara, J. Hojou, K. Furuno, S. Yamamoto, H. Nitani, N. Yamashita, T. Minato, K. Sakuma, T. J. Nucl. Mat. 319, 81 (2003).Google Scholar
5 Moll, S. Thomé, L., Vincent, L. Garrido, F. Sattonnay, G. Thomé, T., Jagielski, J. and Costantini, J. M. Costantini, J. Appl. Phys. 105, 023512 (2009).Google Scholar
6 Sasajima, N. Matsui, T. Hojou, K. Furuno, S. Otsu, H. Izui, K. and Muromura, T. “Radiation damage in yttria yttria-stabilized zirconia under Xe ion irradiation Nucl. Instr. Meth. 141 (1–4), May, 487 (1998).Google Scholar
7 Kurt, E. Sickafus, Christopher J. Wetteland, Neil P. Yu, Baker Ning, Devanathan, Ram, Nastasi, Michael, Bordes, Nicole, Mat. Sci. and Engineering A253, 78–85 (1998).Google Scholar
8 Usov, I.O. Arendt, P.N. Groves, J. R. Stan, L. and DePaula, R.F. Nucl. Instr. Meth. B240, 661 (2005).Google Scholar
9 Duh, J.G. Wu, Y.S. and Chiou, B.S. J. Mat. Sci. Lett. 9, 916 (1990).Google Scholar
10 Fradin, J. Thome, T. Grynszpan, R.I. Thome, L. Anwand, W. and Brauer, G. Mat. Sci. Forum 363–365, 514 (2001).Google Scholar