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AFM Study of Film Growth Kinetics in Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

William M. Tong
Affiliation:
Department of Chemistry & Biochemistry/Solid State Science Center, UCLA, Los Angeles, California 90024-1549, USA
Eric J. Snyder
Affiliation:
Department of Chemistry & Biochemistry/Solid State Science Center, UCLA, Los Angeles, California 90024-1549, USA
R. Stanley Williams
Affiliation:
Department of Chemistry & Biochemistry/Solid State Science Center, UCLA, Los Angeles, California 90024-1549, USA
Akihisa Yanase
Affiliation:
Photodynamics Research Center, Frontier Research Program, RIKEN, ICR Building, 663 Minami-Yoshinari, Aoba-ku, Sendai, 989-32, Japan
Yusaburo Segawa
Affiliation:
Photodynamics Research Center, Frontier Research Program, RIKEN, ICR Building, 663 Minami-Yoshinari, Aoba-ku, Sendai, 989-32, Japan
Mark S. Anderson
Affiliation:
Space Materials Science & Technology Section, Jet Propulsion Laboratory, Pasadena, California 91109-8099, USA
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Abstract

The growth of CuCl/CaF2 heterostructures has been studied with an atomic force microscope (AFM). We have grown by molecular beam epitaxy (MBE) CuCl thin films at various substrate temperatures and thicknesses on CaF2(111) substrates. AFM studies reveal that islanding is the dominant growth mechanism. We calculated the height-height correlation function, 〈lh(qt)|2〉, for each of our films and compared them to the predictions made by the Shadowing Growth Theory, a preexisting growth model that enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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