Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T15:34:09.052Z Has data issue: false hasContentIssue false
  • English
  • Français

Afm Studies of Deformation and Interfacial Sliding in Interconnect Structures in Microelectronic Devices

Published online by Cambridge University Press:  01 February 2011

C. Park ,
I. Dutta ,
K.A. Peterson  and
J. Vella
C. Park
Affiliation:
Center for Materials Science and Engineering, Department of Mechanical Engineering, Naval Postgraduate School, Monterey, CA 93943, [email protected].
I. Dutta
Affiliation:
Center for Materials Science and Engineering, Department of Mechanical Engineering, Naval Postgraduate School, Monterey, CA 93943, [email protected].
K.A. Peterson
Affiliation:
Center for Materials Science and Engineering, Department of Mechanical Engineering, Naval Postgraduate School, Monterey, CA 93943, [email protected].
J. Vella
Affiliation:
Process and Materials Characterization Laboratory, Motorola, Tempe, AZ 85284.
Get access

Abstract

Back-end interconnect structures (BEIS) of micro-electronic devices are susceptible to several deformation phenomena during thermal excursions, because of large differences in thermal expansion coefficients (CTE) between Si, interlayer dielectric (ILD) and metal lines. Here we use atomic force microscopy (AFM) to study plastic deformation and interfacial sliding of Cu interconnect lines on embedded in a low K dielectric (LKD). Following thermal cycling, changes were observed in both inplane Cu line dimensions, as well as out-of plane step height between Cu and LKD in single layer structures. The results of AFM measurements following both ex-situ and in-situ thermal cycling presented. A shear-lag based model is utilized to simulate the thermal cycling response, and rationalize the observed interfacial sliding behavior. Results of in-situ AFM experiments to observe the deformation of Cu-low K interconnect structures under far-field (i.e., package-level) stresses are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E4.11
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Thouless, M.D., Gupta, J., and Harper, J.M.E., J. Mater. Res., 8, 1845 (1993).Google Scholar
2. Peterson, K.A., Park, C. and Dutta, I., MRS Symp. Proc., 716, 483 (2002).Google Scholar
3. Chen, M.W., and Dutta, I., Appl. Phys. Let., 77, 4298 (2000).Google Scholar
4. Dutta, I., Chen, M.W., Peterson, K. and Shultz, T., J. Electron. Mater., 30, 1537 (2001).Google Scholar
5. Dutta, I., Peterson, K. and Chen, M.W., Proc. Plasticity '02, NEAT Press, 117 (2002).Google Scholar
6. Zhmurkin, D.V., Gross, T.S., and Buchwalter, L.P., J. Electron. Mater., 26, 791 (1997).Google Scholar
7. Huang, M., Suo, Z. and Ma, Q., Acta Mater., 49, 3039 (2001).Google Scholar
8. Gignac, L.M., Rodbell, K.P., Cabral, C., Andricacos, P.C., Rice, P.M., Beyers, R.B., Locke, P.S., Klepeis, S.J., Mater. Res. Soc. Symp., 564, 373 (1999).Google Scholar
9. Flinn, P. A., J. Mater. Res., 6, 1498 (1991).Google Scholar
10. Funn, J.V.,. and Dutta, I., Acta Mater., 47, 149 (1999).Google Scholar
11. Peterson, K., Dutta, I. and Chen, M.W., Scripta Mater., 47, 649 (2002).Google Scholar
12. Peterson, K. A., Dutta, I. and Chen, M.W., Acta Mater., 51, in press (2003).Google Scholar
13. Raj, R. and Ashby, M.F., Metall. Trans, 2, 1113 (1971).Google Scholar
14. Dutta, I., Acta Mater., 48, 1055 (2000).Google Scholar
15. Ho, P.S., Lee, K.D., Ogawa, E., Lu, X., Matsuhashi, H., Blaschke, V., Augur, R., Proc.IEDM'02, (741) 2002.Google Scholar