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AFM Measurements of Adhesion between CMP Slurry Particles and Copper

Published online by Cambridge University Press:  01 February 2011

Ruslan Burtovyy
Affiliation:
[email protected] UniversitySchool of Materials Science and Engineering161 Sirrine Hall, Clemson UniversityClemson SC 29634United States
Yong Liu
Affiliation:
[email protected], Clemson University, School of Materials Science and Engineering, 161 Sirrine Hall, Clemson University, Clemson, SC, 29634, United States
Bogdan Zdyrko
Affiliation:
[email protected], Clemson University, School of Materials Science and Engineering, 161 Sirrine Hall, Clemson University, Clemson, SC, 29634, United States
Alex Tregub
Affiliation:
[email protected], Intel Corporation, CMO/FMO, Santa Clara, CA, 95054, United States
Mansour Moinpour
Affiliation:
[email protected], Intel Corporation, CMO/FMO, Santa Clara, CA, 95054, United States
Mark Buehler
Affiliation:
[email protected], Intel Corporation, PTD, Hillsboro, OR, 97124, United States
Igor Luzinov
Affiliation:
[email protected], Clemson University, School of Materials Science and Engineering, 161 Sirrine Hall, Clemson University, Clemson, SC, 29634, United States
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Abstract

Adhesion between abrasive particles and surfaces being polished plays an important role in chemical mechanical planarization (CMP) processes. The changes in particle - surface and particle – particle interactions can significantly influence the effectiveness of material removal and cleaning methods. To determine the adhesion between actual abrasive particles and different surfaces treated by the CMP process a method employing atomic force microscopy (AFM) technique is being developed.

The monolayer of silica abrasive nanoparticles was deposited on silicon wafer covered with polymer anchoring layer. High affinity of the thin polymer film to the particles and wafer ensures the stability of particles monolayer on the surface during measurements. AFM cantilever was modified with attachment of 20-40 microns hollow glass bead (representing a flat surface), which then was covered with copper using physical vapor deposition technique. Force-distance curves were collected employing AFM force volume mode and used to calculate the adhesion value. The effect of different factors (such as pH, presence of surfactants) on adhesion between copper surface and silica slurry has been studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Zhang, F., Busnaina, A., Electrochem. Solid State Lett. 1, 184 (1998).Google Scholar
2 Segeren, L.H.G.J., Siebum, B., Karssenberg, F.G., Berg, J.W.A. van den, and Vancso, G.J., J. Adhesion Sci. Technol., 16, 793 (2002).Google Scholar
3 Stein, D. in Chemical-Mechanical Planarization of Semiconductor Materials, edited by Oliver, M.R. (Springer, 2004) pp. 85132.Google Scholar
4 Parkg, J.-G., Busnaina, A., Semicond. Int., 28, 39 (2005).Google Scholar
5 Lee, S.-Y., Lee, S.-H. and Park, J.-G., J. Electrochem. Soc., 150, G327 (2003).Google Scholar
6 Liu, Y., Zdyrko, B., Tregub, A., Moinpour, M., Buehler, M., Luzinov, I. in Chemical-Mechanical Planarization–Integration, Technology and Reliability, edited by Kumar, A., Lee, J.A., Obeng, Y.S., Vos, I., Johns, E.C., (Mater. Res. Soc. Proc. 867, Warrendale, PA, 2005) pp. 183188.Google Scholar
7 Chavez, K. L., Hess, D. W., J. Electrochem. Soc., 148, G640 (2001).Google Scholar
8 Tsai, T.-H., Yen, S.-C., Appl. Surf. Sci., 210, 190 (2003).Google Scholar
9 Choi, H.-H., Park, J. and Singh, R. K., Electrochem. Solid State Lett., 7, C10 (2004).Google Scholar
10 Larson, I., Pugh, R. J., J. Colloid Interface Sci., 208, 399 (1998).Google Scholar
11 Chin, C. J., Yiacoumi, S. and Tsouris, C., Environ. Sci. Technol., 36, 343 (2002).Google Scholar
12 Ma, H., Chen, S., Yin, B., Zhao, S. and Liu, X., Corros. Sci. 45, 867 (2003).Google Scholar
13 Subramanian, V., Ducher, W., J. Phys. Chem. B, 105, 1389 (2001).Google Scholar
14 Gonzalez, G., Travalloni-Louvisse, A.M., Langmuir, 5, 26 (1989).Google Scholar