Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T06:47:10.800Z Has data issue: false hasContentIssue false
  • English
  • Français

Aerotaxy: A New Route to Formation of GaAs Nanocrystals from Ga Droplets

Published online by Cambridge University Press:  10 February 2011

Lars Samuelson ,
Knut Deppert  and
Jan-Olle Malm
Lars Samuelson
Affiliation:
Nanometer Structure Consortium, Lund University, S-221 00 Lund, Sweden Department of Solid State Physics, Box 118
Knut Deppert
Affiliation:
Nanometer Structure Consortium, Lund University, S-221 00 Lund, Sweden Department of Solid State Physics, Box 118
Jan-Olle Malm
Affiliation:
Nanometer Structure Consortium, Lund University, S-221 00 Lund, Sweden Department of Inorganic Chemistry II, Box 124
Get access

Abstract

A new process, named Aerotaxy, has been developed for growth of quantum dots (QDs) with identical sizes and properties. Self-assembly and intrinsic control of the nanocrystal properties is obtained by (i) an initial selection of spherical droplets of gallium (Ga), all having identical sizes within a few %, employing standard aerosol technology. In a second processing stage (ii) these droplets of gallium are allowed to react with arsine (AsH3), by which the metallic Ga droplets are completely converted into a monodisperse ensemble of galliumarsenide (GaAs) nanocrystals at temperatures as low as 260°C. GaAs nanocrystals, of approximate diameter 10 nm, have been produced and deposited on various substrates. The good crystallinity and stoichiometry of the formed particles are confirmed by transmission electron microscopy studies of individual nanocrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 123
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Weisbuch, C. and Vinter, B., in Quantum Semiconductor Structures, Academic, San Diego, 1991.Google Scholar
2. Bayer, M., Schmidt, A., Forschel, A., Faller, F., Reinecke, T. L., Knipp, P.A., Dremin, A. A., and Kulakovskii, V.D., Phys. Rev. Lett. 74,3439 (1995)Google Scholar
3. Wiedensohler, A., Hansson, H.-C., Maximov, I. and Samuelson, L., Appl. Phys. Lett. 61, 837 (1992), and Deppert, K., Maximov, I., Samuelson, L., Hansson, H.-C., and Wiedensohler, A., Appl. Phys. Lett. 64, 3293 (1994).Google Scholar
4. Leon, R., Petroff, P. M., Leonard, D., and Fafard, S., Science 267, 1966 (1995)Google Scholar
5. Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M.-E., and Samuelson, L., Appl. Phys. Lett. 65,3093 (1994)Google Scholar
6. Sercel, P. C., Saunders, W. A., Atwater, H. A., Vahala, K. J., and Flagan, R. C., Appl. Phys. Lett. 61, 696 (1992).Google Scholar
7. Brus, L. E., Nature 353,301 (1991)Google Scholar
8. Hinds, W. C., in Aerosol Technology John Wiley, New York, 1982.Google Scholar
9. Liu, B. Y. H. and Pui, D. Y. H., J. Colloid Interface Sci. 47, 155 (1974).Google Scholar
10. DenBaars, S. P., Maa, B. Y., Dapkus, P. D., Danner, A. D., and Lee, H. C., J. Cryst. Growth 77, 188 (1986).Google Scholar
11. Stringfellow, G. B., in Organometallic Vapor-Phase Epitaxy: Theory and Practice. Academic, San Diego, 1989.Google Scholar