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Advances in Self-Limiting Growth of Wide Bandgap II–VI Semiconductors

Published online by Cambridge University Press:  16 February 2011

M. Konagai ,
Y. Takemura ,
H. Nakanishi  and
K. Takahashi
M. Konagai
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2-12-1 0hokayama, Meguro-ku, Tokyo 152, JAPAN
Y. Takemura
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2-12-1 0hokayama, Meguro-ku, Tokyo 152, JAPAN
H. Nakanishi
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2-12-1 0hokayama, Meguro-ku, Tokyo 152, JAPAN
K. Takahashi
Affiliation:
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, 2-12-1 0hokayama, Meguro-ku, Tokyo 152, JAPAN
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Abstract

Recent advances in understanding the ALE (atomic layer epitaxy) growth of ZnSe, ZnS and ZnTe are reviewed. The Ideal ALE growth is obtained in the substrate temperature range of 250–350°C for ZnSe. In the ALE growth of ZnSe and ZnTe, a unique self-limiting mechanism is observed, in which the deposition rate saturates at 0.5 monolayer per cycle. Furthermore, applications of ALE of II–VI compounds to the growth of strained layer superlattices are also reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 233
Copyright
Copyright © Materials Research Society 1991

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References

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