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Advances in Ion and Laser Beam Technology: Achievements of Japanese Government and University Projects

Published online by Cambridge University Press:  10 February 2011

Isao Yamada
Isao Yamada*
Affiliation:
Ion Beam Engieering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan, [email protected]
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Abstract

This paper reviews recent R&D activity in advanced beam technologies funded by MITI and JST. A large-scale national project known as AMMTRA (Advanced Material-Processing and Machining Technology Research Association) funded by MITI has made a significant contribution to industrial applications of beam processing by developing high density ion and laser beam equipment. A subsequent program, the ACTA (Advanced Chemical Processing Technology Research Association) project involves development of multi-beam deposition systems for metal and dielectric materials formation including several systems which combine ion and laser beams, ion beams and CVD and plasma, and laser beams with sputtering. NEDO Proposal Based Project and JST (The Japan Science and Technology Corporation)-Exploitation and Application Study Project are fundamentally aimed to transfer technology from university to industry. Research in gas cluster ion beam technology is currently being conducted in the following areas: (i) shallow ion implantation for 0.1 μ m PMOS junction formation, (ii) high rate etching and smoothing for Si, diamond, SiC and metal oxide films and (iii) thin film depositions for optical filter and transparent conductive film. The gas cluster ion beam processes are discussed in comparison with traditional ion beam processing methods which are presently limited by available atomic and molecular ion beams.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 69
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Hellenmans, A. and Bunch, B.H.: The Timetable of Science( Simons & Schuster, New York, 1988).Google Scholar
2. Zigler, J.F. Ed., Handbook of Ion Implantation technolgy (North Holland, Amsterdam 1988 )p.l. Google Scholar
3. Yamada, I., Mater Res. Soc. Symp. Proc., Vol.268, ‘Materials Modification by Energetic Atoms and Ions,” Granbowswki, S., Barnet, S.A, Rossnagel, S.M. and Wasa, K. Eds., 1992, (Pittsburgh, 1996) pp.261–272.Google Scholar
4. Yamada, I., Surf and Coat. Technol. 51,(1992) 514–521.Google Scholar
5. ACTA Final Report (Industrial Technology Council of the Ministry of International Trade and Industry) 1997.Google Scholar
6. Conrad, J.R., Radtke, J., Dodd, R.A. and Worzala, F.J., J.Appl.Phys. 62 (1987) 4591 Google Scholar
7. Cheung, N.W., Nucl. Instr and Meth. B 55 (1991) 811.Google Scholar
8. Inoue, M., Suzuki, Y., Takagi, T., Nucl. Instr andMeth. B121 (1997) 1.Google Scholar
9. Yamada, I., Proc. 14th Symp. on Ion Sources and Ion-Assisted Technology, Tokyo, (The Ion Engineering Society of Japan, Tokyo,1991) pp.227–235.Google Scholar
10. Yamada, I. and Matsuo, J.: Mater Res. Soc. Symp. Proc., Vol.396, ‘Yon Solid Interactions for Materials Modification and Processing'” Eds. D.B., Pocker, D., Illa, Y-T., Cheng, L.R., Harriott and T.W., Sigmon, 1995, (Pittsburgh, 1996) pp. 149–154.Google Scholar
11. Yamada, I. and Matsuo, J.: Mat. Res. Soc. Symp. Proc., Vol.427, ‘Advanced metallization for Future ULSI' Tu, K.N., Poate, J.M., Mayer, J.W. and Chen, L.C. Eds., 1996 (Pittsburgh, 1997) pp265–276.Google Scholar
12. The name of this project is Japan Science and Technology Corporation, Exploitation and Application Study Program: ltas cluster ion beam processing for high performance surface treatment” Google Scholar
13. Proc. ACT International Symposium, Sponsored NEDO, ACTA (Advanced Chemical Processing Technology Research Association,) 1996, October, Tokyo.Google Scholar
14. Murakami, Y, Kuratani, N., nishiyama, S., Imai, O., Ogata, K., Nucl. Instr and Meth., B121 (1997) 212.Google Scholar
15. Irie, M., Ohara, H., Nakayama, A., Kitagawa, N., Nomura, T., Nucl. Instr and Meth., B121 (1997) 133.Google Scholar
16. Nakai, H., Kuwahara, H., Shinohara, J., Kawaratani, T., Sassa, T., Ikegami, Y., Nucl. Instr and Meth., B112 (1996) 280.Google Scholar
17. Nonogaki, R., Yamada, S., Wada, T., Nuclear Instruments and Methods, B121 (1997) 121.Google Scholar
18. Kanno, I., Hayashi, S., Takayama, R., Sakakima, H., Hirao, T., Nucl. Instr. and Meth., B112 (1996) 125.Google Scholar
19. Yamada, I., R&D Report for NEDO, FY 1995 (contract no.A0076).Google Scholar
20. NEDO Consortium program, 1997, Project office: Management office:Osaka Science and Technology Center, Utsubo, Osaka Japan: “R&D for ultra -high quality transparent conductive film fabrication”.Google Scholar
21. Epion Corp. Catalogue (Bedford Mass. USA)Google Scholar
22. Aoki, T., Shimada, N., Takeuchi, D., Matsuo, J., Insepov, Z. and Yamada, I. in Proc. Solid State Devices and Materials, (1996) p. 49–54.Google Scholar
23. Goto, K., Matsuo, J., Sugii, T., Minakata, H., Yamada, I. and Hisatugu, T.: IEDM Tech. Dig., p.435, 1996 Google Scholar
24. Yamada, I., Matsuo, J. Jones, E.C., Takeuchi, D., Aoki, T., Goto, K. and Sugii, T.: Mat. Res. Soc. Symp. Proc., Vol.438, ‘Materials Modification and Synthesis by Ion Beam Processing, Alexander, D., Park, B., Cheung, N., and Skorupa, W. Eds., 1996 (Pittsburgh, 1997) pp 368–374.Google Scholar
25. Jones, K.S. and Rozgonyi, G A in Rapide Thermal Processing Science and Technology Fair, R.B. ed, Boston: Acadmic Press, 1993) 123.Google Scholar
26. Rodder, M., Hong, Q.Z., Nandakumar, M., Aur, S., Hu, J.C. and Chen, I-C., IEDM Tech. Dig., p.563, 1996 Google Scholar
27. Bohr, M., Ahmed, S.S., Ahmed, S.U., Bost, M., Ghani, T.R., Greason, J., Hainsey, R., Jan, C., Packan, P., Sivakumar, S., Thompson, S. and Yang, S., IEDM Tech. Dig., p.847, 1996 Google Scholar
28. Goto, K., Matsuo, J., Tada, Y., Tanaka, T., Momiyama, Y., Sugii, T., and Yamada, I.: IEDM Tech. Dig., 1997, in press.Google Scholar
29. Hu, E.L., Chen, C-H and Green, D.K., J. Vac.Sci. Technol. B14 (1996) 3632.Google Scholar
30. Chu, W.C., Li, Y.P., Liu, J.R., Wu, J.Z., Tidrow, S.C., Toyoda, N., Matsuo, J. and Yamada, I., Appl.Phys Let., 1997, In press.Google Scholar