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Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices

Published online by Cambridge University Press:  01 February 2011

Bernd Thomas ,
Christian Hecht ,
René Stein  and
Peter Friedrichs
Bernd Thomas
Affiliation:
[email protected], SiCED Electronics Development, Epitaxial Growth, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany, +499131731057, +499131723046
Christian Hecht
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co KG, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany
René Stein
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co KG, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany
Peter Friedrichs
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co KG, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany
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Abstract

In this paper we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system. This equipment exhibits a capacity of 7x3” wafers per run and can be upgraded to a 6x4” setup. Characteristics of epilayers and reproducibility of the proc-esses are reported. Furthermore, we show recent results of p-type SiC homoepitaxial growth on 3” 4° off-oriented substrates using a single-wafer hot-wall CVD. The dependence of layer prop-erties on growth parameters, doping and thickness uniformity as well as doping memory effects are discussed. For the characterization of epitaxially grown pn-junctions first research grade pin-diodes were fabricated. The p-type emitters were either deposited in the same growth run to-gether with the n-type buffer and drift layers (continuous growth) or the n- and p-layers were grown in two different growth runs (separate growth).

Keywords

chemical vapor deposition (CVD) (deposition)epitaxyvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-02
Copyright
Copyright © Materials Research Society 2006

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References

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