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Advanced Slurry Formulations for New Generation Chemical Mechanical Planarization (CMP) Applications

Published online by Cambridge University Press:  30 July 2012

Bahar Basim ,
Ayse Karagoz  and
Zeynep Ozdemir
Bahar Basim
Affiliation:
Ozyegin University, Faculty of Engineering, Mechanical Engineering Department, Alemdag, Istanbul, Turkey.
Ayse Karagoz
Affiliation:
Ozyegin University, Faculty of Engineering, Mechanical Engineering Department, Alemdag, Istanbul, Turkey. Yildiz Technical Universityy, Faculty of Chemistry & Metallurgy, Bioengineering Department, Davutpasa, Istanbul, Turkey.
Zeynep Ozdemir
Affiliation:
Ozyegin University, Faculty of Engineering, Mechanical Engineering Department, Alemdag, Istanbul, Turkey.
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Abstract

Chemical Mechanical Planarization (CMP) is widely used to ensure planarity of metal and dielectric surfaces to enable photolithography and hence multilevel metallization in microelectronics manufacturing. The aim of this study is to establish a fundamental understanding on the dynamic growth of nano-scale protective oxide thin films during CMP to enable the selection of proper oxidizer concentrations for slurry formulations. Tungsten was selected as the model metal film to study the formation of these metal oxide films in various oxidizers and Atomic Force Microscope (AFM) was used to measure the surface roughness of the samples conditioned in the oxidizer environment before and after the CMP was conducted. The affect of surface roughness on wettability of the surfaces were also studied through contact angle measurements on the treated tungsten films. Fourier Transform Infrared Spectroscopy with Attenuated Total Reflectance FTIR/ATR technique in combination with the X-Ray Reflectivity (XRR) were utilized to determine the thicknesses of the oxidized nano films on the tungsten surface. The results were evaluated through the material removal responses reported in the literature for the W-CMP in addition to the comparison of the Pilling-Bedworth ratios of the oxidized nano films to determine the ability of the created oxide film as a self-protective oxide.

Keywords

CMPWthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1428: Symposium C – “Interconnect Challenges for CMOS Technology--Materials, Processes and Reliability for Downscaling, Packaging and 3D Stacking” , 2012 , mrss12-1428-c07-08
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Krishnan, M., Nalaskowski, J.W., Cook, L.M., Chem. Rev., 110, p. 178–204 (2010).Google Scholar
2. McCaffery, E. “ Introduction to Corrosion Science ”, Springer, New York, p. 235 (2010).Google Scholar
3. Kaufman, F.B., Thomson, D.B. Broadie, R.E., Jaso, M.A., Guthrie, W.L., Pearson, M.B., Small, M.B., Journal of the Electrochemical Society, 138,(1991) 3460.Google Scholar
4. Robert, D., White, Andrew J., Mueller, Minchul S., Douglas, G., Vincent, P., and Chris, B.R., Journal of The Electrochemical Society, 158 (10) H1041–H1051 (2011).Google Scholar
5. Lim, G., Lee, H-H., Son, J-W., Lee, H-W, Kim, J., Journal of the Electrochemical Society, 153 (5) B169–B172 (2006).Google Scholar
6. Xu, C., Gao, W., Mat Res Innovat, 3, p. 231–235 (2000).Google Scholar
7. Vijayalakshmi, R., Jayachadran, M., Sanjeeviraja, C., Current Applied Physics, 3, p. 171–175 (2003).Google Scholar
8. Bielman, M., Mahajan, U., Singh, R. K., Agarwal, P., Mischler, S., Rosset, E., Landolt, D., in Chemical Mechanical Polishing – Fundamentals and Challenges, Babu, S.V., Danyluk, S., Krishnan, M., Tsujimura, M., Editors, PV 566, p.97, Mater. Res. Soc. Proc., Pittsburgh, PA (2000).Google Scholar