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Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4µm Photovoltaic Detectors

Published online by Cambridge University Press:  10 February 2011

T.T. Piotrowski ,
A. Piotrowska ,
E. Kaminska ,
K. Golaszewska ,
E Papis ,
M Piskorski ,
W Jung ,
J Katcki ,
A. Kudla  and
J. Adamczewska
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T.T. Piotrowski
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
E. Kaminska
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
K. Golaszewska
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
E Papis
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
M Piskorski
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
W Jung
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
J Katcki
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
A. Kudla
Affiliation:
Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland, [email protected]
J. Adamczewska
Affiliation:
Institute of Physics PAS, Al. Lotników 46, 02-668 Warsaw, Poland
J. Piotrowski
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
Z. Nowak
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
Z. Orman
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
J. Pawluczyk
Affiliation:
VIGO Systems Ltd. ul. Swietlików 3, 01-389 Warsaw, Poland, jpiotr@pol. pl
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Abstract

This paper reports on the design and fabrication of GaSb/n-InxGal1−xAsySb1−y/p-AlxGal−xAsySb1−y heterojuction photodetectors operating in the 2 - 2.4 µm wavelength region. Device structures were grown by LPE and fabricated as mesa-type diodes by RIE etching in CC14/H2 plasma. For mesa passivation a surface treatment in (NH42S water solution was carried out. The photodiodes structures are characterized by differential resistance RoA=400 ωcm2. Measured detectivity is in the range 3.1010 - 2. 1011 cmHz1/2/W, in dependence on the active area and cutoff wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 89
Copyright
Copyright © Materials Research Society 2000

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